NXP Semiconductors, the independent company founded by Philips, has developed the model BFU725F low-noise transistor based on silicon-germanium-carbon (SiGeC) BiCMOS process technology. The low-cost and RoHS-compliant transistor boasts a cutoff frequency that supports applications in the 10 to 30 GHz range. It achieves a noise figure of 0.43 dB at 1.8 GHz and 0.70 dB at 5.8 GHz, with maximum stable gain of 27 dB at 1.8 GHz and 10 dB at 18 GHz. The device has a cutoff frequency of 70 GHz yet is supplied in a low-cost plastic surface-mount package. For more information, visit the NXP Semiconductors website at: http://www.nxp.com