Trusted Resource for the Working RF Engineer
Search MWRF
Home
Product Directory
Topics
Note Pad
electronica 2008
EuMW 2008
Back Issues
RF Blogs
Military Electronics
Subscribe
News
Design Features
Web Seminars
PartFinder
Whitepapers
Microwave Legends
Newsletter
WebConnect
RF Design
RSS
RSS
Sponsored Links
 |
April 2005 [Components] Design An E-pHEMT 4.9-to-6.0-GHz LNA Low-noise amplifiers (LNAs) are invaluable for increasing the sensitivity and range of a microwave receiver. For applications at 4.9 to 6.0 GHz, which include IEEE 802.11a, HiperLAN2, and HiSWANa wireless-local-area-network (WLAN) receivers, a two-stage design based on enhancement-mode, pseudomorphic high-electron-mobility-transistor (E-pHEMT) device technology delivers 22 dB gain at 5.5 GHz, with a low noise figure of 1.4 dB and +11.5-dBm output power at 1-dB compression. The amplifier... March 2004 [Components] Build An E-pHEMT Low-Noise Amplifier Low-noise amplifiers (LNAs) for high-frequency applications have been based on GaAs metal-epitaxial-semiconductor field-effect-transistor (MESFET) and depletion-mode pseudomorphic-high-electron-mobility-transistor (pHEMT) technologies for some time.... |
|
||||||
Sponsored Links
Resources
Electronic Design