Author - J. Bai

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October 2009 [Materials]
Form GaAs/InGaAs Lasers On Virtual Ge
Reliable GaAs-based optoelectronic devices, such as GaAs/InGaAs quantum well lasers, can be realized on silicon substrates using several advanced techniques. Fabrication involves first forming germanium (Ge) stripes on a silicon dioxide (SiO2) trench-patterned silicon substrate via aspect ratio trapping (ART), where any defects originating from the Ge/Si interface are trapped by laterally confining sidewalls. Defects arising from above the...